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27 December 2002 Simple method for separating and evaluating origins of a side error in mask CD uniformity: photomask blanks and mask-making processes
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Abstract
As the feature size of integrated circuits shrinks, the demands for the critical dimension (CD) uniformity on wafers are becoming tighter. In the era of low k1, moreover, mask CD uniformity should be controlled even more stringently due to the higher mask error enhancement factor (MEEF). Mask CD non-uniformity can originate from several sources which include photomask blanks and mask-making processes (exposure, post-exposure bake (PEB), development, and etch processes). Analyzing the CD error sources and eliminating the origins are very important tasks in optimization of mask-manufacturing processes. In this paper, we focus on the side error in mask CD uniformity and present a simple method for separating and evaluating the origins. Especially, quantitative analysis of the side errors induced by photomask blanks and mask-making processes, respectively, is given. Photomask blanks are found to be one of the main sources of the side error and it is shown that the temperature distribution of the PEB process during the ramp-up as well as the stable period should be maintained uniformly for chemically amplified resist (CAR) blanks in order to reduce the process-induced side error.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yo-Han Choi, Jong-Rak Park, Moon-Gyu Sung, Seung-Hune Yang, Soon-Ho Kim, Ho-June Lee, Jeong-Yun Lee, Il-Yong Jang, Yong-Hoon Kim, Sung-Woon Choi, Hee-Sun Yoon, and Jung-Min Sohn "Simple method for separating and evaluating origins of a side error in mask CD uniformity: photomask blanks and mask-making processes", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468099; https://doi.org/10.1117/12.468099
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