Simulation-based defect printability analysis on alternating phase-shifting masks for 193-nm lithography

Linyong Pang; Zongchang Yu; Gerard T. Luk-Pat; Jerry X. Chen; William Volk

doi:10.1117/12.468205

27 December 2002 Simulation-based Defect Printability Analysis on Alternating Phase Shifting Masks for 193nm Lithography

Linyong Pang, Zongchang Yu, Gerard T. Luk-Pat, Jerry X. Chen, William Volk

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468205
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

For alternating aperture phase shift masks (AAPSM) and 193 nm (ArF) lithography, we have simulated defect printability using inspection images and software-based modeling. Masks were fabricated by DuPont Photomasks with programmed defects of known size, phase, and location. Three phase layers were used to generate defect angles 60, 120 and 180 degrees. Simulated wafer prints were performed using Numerical Technologies’ Virtual Stepper System, which takes inspection images as input and models the lithographic process. With inspection images from KLA-Tencor’s SLF27 system, our critical-dimension measurements show good agreement with those from wafers printed on an ASML PAS 5500/900 scanner.

Citation Download Citation

Linyong Pang, Zongchang Yu, Gerard T. Luk-Pat, Jerry X. Chen, and William Volk "Simulation-based Defect Printability Analysis on Alternating Phase Shifting Masks for 193nm Lithography", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468205

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