27 December 2002 Validation of ArF Chromeless PSM in the Sub-100 nm Node DRAM Cell
Author Affiliations +
Abstract
Process windows, MEEF (Mask Error Enhancement Factor), flare, aberration effect of the CLM (Cr-less PSM) were measured by the simulations and experiments for the various DRAM cell patterns compared with 6% transmittance HTPSM in the ArF lithography. We designed CLM layouts of sub 100nm node DRAM cells concerning the mask manufacturability, maximizing the NILS (Normalized Image Log Slope) and minimizing the MEEF with a semi-automatic OPC tool. Isolation, line and space and various contact patterns showed increasing process windows compared with HTPSM and this strongly depended on the layout design. Using 0.75 NA ArF Scanner, CLM showed NILS reduction by about 10% in the presence of lens aberration and flare, which reduced DoF margin by about 0.1~0.2 μm depending on the layer. So the critical layers in sub 100 nm node DRAM satisified 10% of EL (Exposure Latitude) and 0.4 μm of DoF (Depth of Focus) margin.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ju-Hyung Lee, Ju-Hyung Lee, Dong-Hoon Chung, Dong-Hoon Chung, Dong-Ho Cha, Dong-Ho Cha, Ho-Chul Kim, Ho-Chul Kim, Joon-Soo Park, Joon-Soo Park, Dong-Seok Nam, Dong-Seok Nam, Sang-Gyun Woo, Sang-Gyun Woo, Han-Ku Cho, Han-Ku Cho, Woo-Sung Han, Woo-Sung Han, } "Validation of ArF Chromeless PSM in the Sub-100 nm Node DRAM Cell", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467504; https://doi.org/10.1117/12.467504
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

Extension of Cr less PSM to sub 90 nm node...
Proceedings of SPIE (August 27 2003)
Evaluation of ArF CLM in the sub 100 nm DRAM...
Proceedings of SPIE (June 25 2003)
Inspection of chromeless AAPSM
Proceedings of SPIE (July 29 2002)
AAPSM repair utilizing transparent etch stop layer
Proceedings of SPIE (December 05 2004)

Back to Top