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27 December 2002 Validation of ArF Chromeless PSM in the Sub-100 nm Node DRAM Cell
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Abstract
Process windows, MEEF (Mask Error Enhancement Factor), flare, aberration effect of the CLM (Cr-less PSM) were measured by the simulations and experiments for the various DRAM cell patterns compared with 6% transmittance HTPSM in the ArF lithography. We designed CLM layouts of sub 100nm node DRAM cells concerning the mask manufacturability, maximizing the NILS (Normalized Image Log Slope) and minimizing the MEEF with a semi-automatic OPC tool. Isolation, line and space and various contact patterns showed increasing process windows compared with HTPSM and this strongly depended on the layout design. Using 0.75 NA ArF Scanner, CLM showed NILS reduction by about 10% in the presence of lens aberration and flare, which reduced DoF margin by about 0.1~0.2 μm depending on the layer. So the critical layers in sub 100 nm node DRAM satisified 10% of EL (Exposure Latitude) and 0.4 μm of DoF (Depth of Focus) margin.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ju-Hyung Lee, Dong-Hoon Chung, Dong-Ho Cha, Ho-Chul Kim, Joon-Soo Park, Dong-Seok Nam, Sang-Gyun Woo, Han-Ku Cho, and Woo-Sung Han "Validation of ArF Chromeless PSM in the Sub-100 nm Node DRAM Cell", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467504
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