29 August 2002 2.5-Gb/s CMOS VCSEL driver circuit with various modulation depths
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481053
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
2.5Gb/s optical transmitter IC for vertical-cavity surface-emitting lasers (VCSELs) was fabricated using the TSMC 2-poly 4-metal process of 0.35μm Si-CMOS. This IC has four channels with 250μm pitch for VCSEL array. The transmitter IC consists of four parts, i.e., buffer, differential amplifier, threshold current controller and modulation current controller. Modifying the threshold current and modulation current, we attained a wide range of the operation current from 1mA to 20mA. The measurement of the IC chip packaged with a 850nm VCSEL array, we obtained a maximum optical output power of 2dBm in 2.5Gb/s operation and an extinction ratio of 5~25dB.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huk-Yong Kwak, Huk-Yong Kwak, Saekyoung Kang, Saekyoung Kang, Sung-Hwan Hwang, Sung-Hwan Hwang, Hyo-Hoon Park, Hyo-Hoon Park, } "2.5-Gb/s CMOS VCSEL driver circuit with various modulation depths", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481053; https://doi.org/10.1117/12.481053
PROCEEDINGS
6 PAGES


SHARE
Back to Top