29 August 2002 Deposition of Er3+:Al2O3 films by closed-field unbalanced magnetron sputtering and photoluminescence characterization of the films
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480976
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Er3+-doped A1203 thin films are deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering(CFUBMS).The process parameters,such as target bias voltage, substrate bias voltage, 02 gas flows, sputtering gas pressure,are studied.The thin film properties of interest are Al/O ratio,thickness,refractive index,crystallographic structure and surface roughness. 1.53μm photoluminescence(PL) characterization pumping at wavelength 980nm is measured.The relationship between PL peak intensity and different anneal temperature, and different pumping power is experimental investigated.
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Chengren Li, Changlie Song, Shufeng Li, Wenxong Rao, "Deposition of Er3+:Al2O3 films by closed-field unbalanced magnetron sputtering and photoluminescence characterization of the films", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480976; https://doi.org/10.1117/12.480976
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