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29 August 2002 Effect of linewidth enhancement factor in 1.55-um MWQ high-power laser diodes
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481055
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
1.55 μm­ multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factor (a-factor) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes whose α-factor is 2 rather than 4. As injection current increased, the FWHM of the far-fields also increased regardless of α-factor. This phenomenon was explained by reduction of filament spacing as injection current increased
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Il Ki Han, Si Hyung Cho, and Jung II Lee "Effect of linewidth enhancement factor in 1.55-um MWQ high-power laser diodes", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481055
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