29 August 2002 Fabrication of AlGaN/GaN high-electron-mobility transistors
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481021
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
In this paper, the growth and device fabrication of AIGaN/GaN HEMTs are investigated by using Metal-Organic Vapor Phase Epi taxy (MOVPE) system. The grown wafer consists of a 3-μm-thick unintentionally doped GaN buffer layer, an undoped AIGaN spacer layer, and a n-doped Al0.28Ga0.72N cap layer. The growth condition and the wafer structure are optimized for high performance devices. The devices exhibit a maximum saturation current density of 1000 mA/mm, good pinch off at -5V gate bias and a peak extrinsic transconductance of 180 mS/mm. Further efforts to improve the device performance are also discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tong Wu, Zhi-Biao Hao, Wenping Guo, Shu-Wei Wu, Yi Luo, Qing-Ming Zeng, Xian-Jie Li, "Fabrication of AlGaN/GaN high-electron-mobility transistors", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481021; https://doi.org/10.1117/12.481021
PROCEEDINGS
3 PAGES


SHARE
Back to Top