29 August 2002 High-linearity and -power 1.3-μm AlGaInAs strained MQW DFB-LD
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481007
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
AlGaInAs/InP strained MQW reversed-mesa RWG structure is proposed to reduce leakage current and improve linearity, and applied to make high linearity and high power 1.3μm DFB-LD. For 1.3μm AlGaInAs strained MQW DFB LD, the lasers operated with 10mA threshold current, 0.48mW/mA slope efficiency for one facet, 45dB SMSR. The -3dB cutoff frequency is 14GHz, and the eye pattern is opened widely at 10Gb/s. Under PAL 59 channels test, output power exceeds 15mW with COS<-69.4dBc, CTB<-69.4dBc, CNR<-52dB, which is the first reported RWG 1.3μm DFB-LD for optical CATV application. This implies that AlGaInAs/InP strained MQW reversed-mesa RWG structure could effectively reduce leakage current.
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Kun Shen, Kun Shen, Ren-Fan Wang, Ren-Fan Wang, Ai-Wen Yue, Ai-Wen Yue, Hong-Tao Yang, Hong-Tao Yang, Shi-Bin Fan, Shi-Bin Fan, "High-linearity and -power 1.3-μm AlGaInAs strained MQW DFB-LD", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481007; https://doi.org/10.1117/12.481007
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