29 August 2002 High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480977
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
This paper reviews recent progress of high-power 14xx-nm pump lasers using AlGaInAs/InP material. This material has superior temperature characteristics to conventional InGaAsP/InP. As a result, it is more suitable for high current and high efficiency operations as well as uncooled applications for the high power 14xx-nm lasers, which are required for advanced optical amplifications. The laser module consists of a laser chip coupled to a fiber lens and mounted on a thermoelectric cooler in a standard butterfly package. The wavelength of the laser can be stabilized with an external fiber Bragg grating (FBG). We have demonstrated a maximum module fiber output power of 550mW at 1.75A and characteristic temperatures of T0 = 99K and T1 = 348K over a range of chip heat-sink temperatures from 15°C to 50°C. To the best of our knowledge, these are the highest efficiency and temperature characteristics from a single-mode 14xx-nm semiconductor laser module capable of over 0.5W fiber output power. At a chip heat-sink temperature of 70°C, a power of 360mW was obtained for a laser module with FBG, which is the highest reported to date for any wavelengths from 1300nm to 1600nm and would enable uncooled applications of the 14xx-nm lasers in the future.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Qian, Yi Qian, Angela Hohl-AbiChedid, Angela Hohl-AbiChedid, Jin Li, Jin Li, Fan Ye, Fan Ye, Fang Yang, Fang Yang, Audra Rice, Audra Rice, Xiaoyuan Chen, Xiaoyuan Chen, Scot D. Solimine, Scot D. Solimine, Rajaram J. Bhat, Rajaram J. Bhat, Martin Hai Hu, Martin Hai Hu, Chung-En Zah, Chung-En Zah, } "High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480977; https://doi.org/10.1117/12.480977
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