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29 August 2002 Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481005
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
The influence of high-temperature (>870°C) rapid-thermal-annealing (RTA) induced cracks on the laser performance fabricated with GaAs-AlGaAs quantum-well microstructures is reported. The effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface cracks strongly depend on the atomic interdiffusion between the well and the barrier layers, and on the quality of the dielectric caps as well. In addition to the detailed analysis of the cracking effects on the laser performance, an effective way of reducing the density of RTA-induced cracks was also explored for the dielectrics grown by plasma-enhanced chemical vapor deposition under a low-stressed condition.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hoshin H. Yee, Tao-Wei Chou, Chun-Hung Lai, Chia-Hsuan Lin, Meng-Shian Lin, and Cheng-Yu Chen "Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481005
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