29 August 2002 Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481052
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Three types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 μm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x1017/cm3), Type B (p-InGaAsP, 2x1018/cm3), and Type C (p-InP, 2x1018/cm3), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (T0) was higher for type B than others.
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Il Ki Han, Il Ki Han, Du Chang Heo, Du Chang Heo, Won Jun Choi, Won Jun Choi, Jung Il Lee, Jung Il Lee, } "Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481052; https://doi.org/10.1117/12.481052
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