Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching

Bing Xiong; Changzheng Sun; Jian Wang; Zhi-Biao Hao; Yi Luo

doi:10.1117/12.480999

29 August 2002 Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching

Bing Xiong, Changzheng Sun, Jian Wang, Zhi-Biao Hao, Yi Luo

Author Affiliations +

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480999
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Inductively coupled plasma (ICP) dry etching technique has been adopted to form narrow high-mesa ridge waveguide structure in a high-speed integrated EA modulator. A 3dBe bandwidth of over 12 GHz has been achieved without the use of polyimide in the DFB laser integrated EA modulator. Meanwhile, integrated device with a threshold current as low as 12 mA has been demonstrated by optimization ofthe wavelength detuning.

Citation Download Citation

Bing Xiong, Changzheng Sun, Jian Wang, Zhi-Biao Hao, and Yi Luo "Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480999

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