29 August 2002 Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480999
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Inductively coupled plasma (ICP) dry etching technique has been adopted to form narrow high-mesa ridge waveguide structure in a high-speed integrated EA modulator. A 3dBe bandwidth of over 12 GHz has been achieved without the use of polyimide in the DFB laser integrated EA modulator. Meanwhile, integrated device with a threshold current as low as 12 mA has been demonstrated by optimization ofthe wavelength detuning.
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Bing Xiong, Bing Xiong, Changzheng Sun, Changzheng Sun, Jian Wang, Jian Wang, Zhi-Biao Hao, Zhi-Biao Hao, Yi Luo, Yi Luo, } "Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480999; https://doi.org/10.1117/12.480999
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