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29 August 2002 Low-threshold InGaAsP laser with etched facets by inductively coupled plasma
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481008
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Low threshold semiconductor lasers with etched facets have been fabricated by inductively coupled plasma (ICP) dry etching technology. To ensure vertical and smooth etched-facets, a novel C12/CH4/Ar mixture has been adopted for the ICP etching process. The typical threshold current of etched-facet lasers is about 1 8 mA, which is as low as that of lasers with cleaved-facets and similar cavity length.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Wang, Bing Xiong, Changzheng Sun, Zhi-Biao Hao, and Yi Luo "Low-threshold InGaAsP laser with etched facets by inductively coupled plasma", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481008
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