Low-threshold InGaAsP laser with etched facets by inductively coupled plasma

Jian Wang; Bing Xiong; Changzheng Sun; Zhi-Biao Hao; Yi Luo

doi:10.1117/12.481008

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29 August 2002 Low-threshold InGaAsP laser with etched facets by inductively coupled plasma

Jian Wang, Bing Xiong, Changzheng Sun, Zhi-Biao Hao, Yi Luo

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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481008
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Low threshold semiconductor lasers with etched facets have been fabricated by inductively coupled plasma (ICP) dry etching technology. To ensure vertical and smooth etched-facets, a novel C1₂/CH₄/Ar mixture has been adopted for the ICP etching process. The typical threshold current of etched-facet lasers is about 1 8 mA, which is as low as that of lasers with cleaved-facets and similar cavity length.

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Jian Wang, Bing Xiong, Changzheng Sun, Zhi-Biao Hao, and Yi Luo "Low-threshold InGaAsP laser with etched facets by inductively coupled plasma", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481008

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