29 August 2002 Temperature-insensitive high-efficiency LDs for over 85°C uncooled operation
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Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481004
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
We have developed temperature insensitive high-efficiency LDs that can operate at wavelengths around 1.3 um for TOSA (Transmitter Optical Sub-Assembly) modules, which are our proposed light source solution for compact transmitters. Since the modules should be used without temperature controllers, a high slope efficiency and high output power operation at over 85degC is essential for LDs. We eliminated the leakage current flowing outside of the active layer using a buried-hetero structure. This resulted in excellent lasing characteristics. The slope efficiency at 25degC and 85degC was 0.49 W/A and 0.38 W/A, respectively. The slope efficiency degradation defined as a ratio of the slope efficiency value at 85degC to that at 25degC was -1.1dB, which to our knowledge is a record value to be reported for practical InGaAsP DH LDs. Excellent uniformity and reproducibility for lasing characteristics of 85degC were verified through multiple wafer runs. The fairly stable long-term operation test of ASM LDs was performed and estimated MTF (Median Time to Failure) at 85degC-10mW conditions was over 1 x 105 hours. Using newly developed ASM LDs, we have assembled the world smallest TOSA modules that could be realized for suitable light source solution under severe ambient temperature conditions.
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Yoshihiro Sasaki, Yoshihiro Sasaki, Shotarou Kitamura, Shotarou Kitamura, Shinya Sudo, Shinya Sudo, Akihiro Itoh, Akihiro Itoh, Takashi Matsumoto, Takashi Matsumoto, Tetsu Yoshizawa, Tetsu Yoshizawa, Hidenori Kato, Hidenori Kato, Keirou Komatsu, Keirou Komatsu, "Temperature-insensitive high-efficiency LDs for over 85°C uncooled operation", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481004; https://doi.org/10.1117/12.481004


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