Transient and static thermal behavior of high-power single-mode semiconductor lasers

Martin Hai Hu; Xingsheng Liu; Chung-En Zah

doi:10.1117/12.480966

29 August 2002 Transient and static thermal behavior of high-power single-mode semiconductor lasers

Martin Hai Hu, Xingsheng Liu, Chung-En Zah

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480966
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Transient and static thermal response of high power single-mode laser module has been simulated using finite element method (FEM). FEM modeling revealed the time constants of heat propagation in lateral direction and in vertical direction. The time constants calculated by FEM modeling in the microsecond scale and the sub-millisecond to millisecond scale were experimentally verified by a time-resolved far-field optical measurement and a transient forward-voltage measurement respectively. It is shown that the active region, semiconductor substrate and the solder-submount each contributes about 35%, 50% and 15% to the total static thermal resistance of the laser package.

Citation Download Citation

Martin Hai Hu, Xingsheng Liu, and Chung-En Zah "Transient and static thermal behavior of high-power single-mode semiconductor lasers", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480966

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