Temperature dependence of insertion loss and bias drift of Ti:LiNbO3 optical external modulator

Hyung-Do Yoon; Woo-Seok Yang; Han-Young Lee; Dae-Won Yoon

doi:10.1117/12.480578

23 August 2002 Temperature dependence of insertion loss and bias drift of Ti:LiNbO3 optical external modulator

Hyung-Do Yoon, Woo-Seok Yang, Han-Young Lee, Dae-Won Yoon

Proceedings Volume 4906, Optical Components and Transmission Systems; (2002) https://doi.org/10.1117/12.480578
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Device performance of Ti:LiNbO3 10Gbps intensity modulator and 5Gbps phase modulator has been measured over various temperature in terms of insertion loss and bias drift voltage. Insertion loss and DC bias drift changed by 0.4dB and 0.45V, respectively, whether RF&DC port is open or short.

Citation Download Citation

Hyung-Do Yoon, Woo-Seok Yang, Han-Young Lee, and Dae-Won Yoon "Temperature dependence of insertion loss and bias drift of Ti:LiNbO3 optical external modulator", Proc. SPIE 4906, Optical Components and Transmission Systems, (23 August 2002); https://doi.org/10.1117/12.480578

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