Translator Disclaimer
5 September 2002 Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
Author Affiliations +
Abstract
It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900 °C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microcopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900 °C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yen-Sheng Lin, Kung-Jen Ma, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, Chih Chung Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang "Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482212
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top