Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy

Hongwei Liang; Youming Lu; De Zen Shen; Yichun Liu; B. H. Li; J. Y. Zhang; Xiwu Fan

doi:10.1117/12.482228

5 September 2002 Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy

Hongwei Liang, Youming Lu, De Zen Shen, Yichun Liu, B. H. Li, J. Y. Zhang, Xiwu Fan

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482228
Event: Photonics Asia, 2002, Shanghai, China

Abstract

ZnO thin films have been grown on a (400) Si substrate by plasma-molecular beam epitaxy (P-MBE). The sample was characterized by X-ray diffraction (XRD) and photoluminescence (PL). X-ray diffraction result exhibits a strong (002) diffraction peak of ZnO thin film. In PL spectra, a dominant ultraviolet light (UL) emission at 3.265eV is observed at room temperature (RT). According to the energy position of the UL emission, this luminescence at RT was considered to be related to exciton recombination. The samples were annealed in oxygen for two hours at different temperatures, XRD shows the improvement of crystal quality with increasing annealing temperature.

Citation Download Citation

Hongwei Liang, Youming Lu, De Zen Shen, Yichun Liu, B. H. Li, J. Y. Zhang, and Xiwu Fan "Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482228

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