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5 September 2002 High-density self-organized quantum dots with improved size uniformity for optical device applications
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Abstract
We review the properties of ordered InGaAs QDs arrays, which are formed by self-organization mechanism on GaAs (311)B substrate. We show that the QDs exhibit remarkably different characteristics compared to the more commonly studied InAs QDs grown on GaAs (00 1) substrate. In addition, some recent results of our strain-compensation growth of InAs QDs stack structures on InP (311)B substrate are presented. The stacked InAs QDs on InP (311)B substrate show strong photoluminescence emission at > 1.55µm at room temperature, which is thereby considered to be promising for the next generation fiber-optic communication devices.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshitaka Okada, K. Akahane, and Mitsuo Kawabe "High-density self-organized quantum dots with improved size uniformity for optical device applications", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482205
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