5 September 2002 Ultraviolet laser properties of diamond films by CVD
Author Affiliations +
Abstract
The ultraviolet light emission from diamond films was investigated. The diamond films on Si (100) were deposited by microwave plasma chemical vapor deposition. The B-doped and P-doped layers were formed by cold ion implantation. The properties of p-type and n-type layers were characterized by SEM, SIMS, Raman spectroscopy and Hall measurements. The experimental results showed that a sharp emission peak at 235nm was observed at 22V for 9niA at room temperature. A broad A-band emission in the visible region was also appeared simultaneously. The intensity of ultraviolet emission was changed with carrier mobility and temperature. The results obtained have discussed in detail.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wanlu Wang, Kejun Liao, Yabo Zhu, Y. Li, Y. Ma, "Ultraviolet laser properties of diamond films by CVD", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482249; https://doi.org/10.1117/12.482249
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

High rate chemical vapor deposition of diamond films by dc...
Proceedings of SPIE (December 01 1990)
Diamond layers for the protection of infrared windows
Proceedings of SPIE (December 14 1992)
Vapor Deposition Synthesis Of Diamond Films
Proceedings of SPIE (December 19 1986)
Diamond Synthesis By DC Plasma Jet CVD
Proceedings of SPIE (January 15 1989)
High-rate synthesis of high-quality diamond for IR optics
Proceedings of SPIE (September 28 1994)

Back to Top