5 September 2002 Ultraviolet laser properties of diamond films by CVD
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Abstract
The ultraviolet light emission from diamond films was investigated. The diamond films on Si (100) were deposited by microwave plasma chemical vapor deposition. The B-doped and P-doped layers were formed by cold ion implantation. The properties of p-type and n-type layers were characterized by SEM, SIMS, Raman spectroscopy and Hall measurements. The experimental results showed that a sharp emission peak at 235nm was observed at 22V for 9niA at room temperature. A broad A-band emission in the visible region was also appeared simultaneously. The intensity of ultraviolet emission was changed with carrier mobility and temperature. The results obtained have discussed in detail.
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Wanlu Wang, Wanlu Wang, Kejun Liao, Kejun Liao, Yabo Zhu, Yabo Zhu, Y. Li, Y. Li, Y. Ma, Y. Ma, } "Ultraviolet laser properties of diamond films by CVD", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482249; https://doi.org/10.1117/12.482249
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