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5 September 2002 Ultraviolet laser properties of diamond films by CVD
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Abstract
The ultraviolet light emission from diamond films was investigated. The diamond films on Si (100) were deposited by microwave plasma chemical vapor deposition. The B-doped and P-doped layers were formed by cold ion implantation. The properties of p-type and n-type layers were characterized by SEM, SIMS, Raman spectroscopy and Hall measurements. The experimental results showed that a sharp emission peak at 235nm was observed at 22V for 9niA at room temperature. A broad A-band emission in the visible region was also appeared simultaneously. The intensity of ultraviolet emission was changed with carrier mobility and temperature. The results obtained have discussed in detail.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wanlu Wang, Kejun Liao, Yabo Zhu, Y. Li, and Y. Ma "Ultraviolet laser properties of diamond films by CVD", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482249
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