5 September 2002 Experiment and design of near-diffraction-limited cw and Q-cw Yb:YAG microchip lasers
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In order to get diffraction-limited beam by Yb:YAG microchip laser, a simple design rule for laser diode (LD) pumped Yb:YAG laser by using M2 factor is presented. The validity of this model is demonstrated by LD pumped CW and QCW Yb:YAG microchip laser experiments. High pump intensity and mode matching between pump and lasing are considered in the end-pumped quasi-three-level microchip laser system. The pumping intensity distributions in laser chip with different pump beam M2 factor and different doped crystal are shown. Experimental setup and results of the established LD end-pumped CW and QCW Yb:YAG microchip lasers are presented. Near diffraction—limited beam is achieved with 40% slop efficiency at 1.049jtm output wavelength. In QCW mode, 16.4µJ pulse energy with TEM00 mode is measured at the repetition rate of 100Hz. The laser pulse relaxation processing and laser pulse width agree with the theoretical results.
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Ping Yan, Haisheng Wu, Mali Gong, Qiang Liu, Ruizhen Cui, and Weipu Jia "Experiment and design of near-diffraction-limited cw and Q-cw Yb:YAG microchip lasers", Proc. SPIE 4914, High-Power Lasers and Applications II, (5 September 2002); doi: 10.1117/12.481756; https://doi.org/10.1117/12.481756

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