Paper
12 September 2002 Deposition of nanocrystalline diamond films by excimer laser ablation of carbon
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Abstract
In this work, excimer laser (XeC1 308nm) is adopted to ablate the carbon target in order to deposit high quality nano-crystalline diamond films via electron assisted chemical vapor deposition (EACVD). In experiment, the temperature of substrate is about 300~450 degree Celsius, reacting gas is the mixture of methane and hydrogen in which volume ratio of methane to hydrogen is about 0.7 %, laser power density is 10-710b0 W/cm2. Experimental results show that the sharp peak in Raman spectra of sample films appears at 1332cm-1, which indicates crystalline diamond phase is formed in the samples. And the (lii) characteristic diffraction peak of diamond appears at 20=43.9° in X-ray diffraction spectra. Finally, the growth mechanism of diamond film at low temperature is discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qingxun Zhao, Lifang Dong, Guangsheng Fu, Yong Shang, Yinshun Wang, and Yongjie Wang "Deposition of nanocrystalline diamond films by excimer laser ablation of carbon", Proc. SPIE 4915, Lasers in Material Processing and Manufacturing, (12 September 2002); https://doi.org/10.1117/12.482889
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Cited by 2 scholarly publications.
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KEYWORDS
Diamond

Plasma

Laser ablation

Raman spectroscopy

Carbon

Hydrogen

Silicon

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