In this work, excimer laser (XeC1 308nm) is adopted to ablate the carbon target in order to deposit high quality nano-crystalline diamond films via electron assisted chemical vapor deposition (EACVD). In experiment, the temperature of substrate is about 300~450 degree Celsius, reacting gas is the mixture of methane and hydrogen in which volume ratio of methane to hydrogen is about 0.7 %, laser power density is 10-710b0 W/cm2. Experimental results show that the sharp peak in Raman spectra of sample films appears at 1332cm-1, which indicates crystalline diamond phase is formed in the samples. And the (lii) characteristic diffraction peak of diamond appears at 20=43.9° in X-ray diffraction spectra. Finally, the growth mechanism of diamond film at low temperature is discussed.
|