12 September 2002 Laser nanocrystalization of the amorphous silicon with and without metal introduction
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Laser nanocrystallization of the amorphous silicon (a-Si) deposited on Si (100) or glass substrate with and without metal catalyst is investigated. SEM results indicate that the surface morphology is presented as many nanograins are studded on the former's surface after crystallization, whereas, only with plenty of spots scattering on the latter's surface. HRTEM studies show that the nanograins are Si nanocrystallites and the spots are actually crystalline Si nanowires. Further analysis on the crystallizing process of the two kinds of annealing has been performed to explain the morphology difference oftwo kinds ofannealing techniques.
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Li Han, Li Han, She Qiang Li, She Qiang Li, Wei Yu, Wei Yu, Ying Cai Peng, Ying Cai Peng, Guangsheng Fu, Guangsheng Fu, } "Laser nanocrystalization of the amorphous silicon with and without metal introduction", Proc. SPIE 4915, Lasers in Material Processing and Manufacturing, (12 September 2002); doi: 10.1117/12.482908; https://doi.org/10.1117/12.482908

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