17 September 2002 Characteristics of n-GaN after ICP etching
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Abstract
In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.
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Yanjun Han, Song Xue, Wenping Guo, Zhi-Biao Hao, Changzheng Sun, Yi Luo, "Characteristics of n-GaN after ICP etching", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483055; https://doi.org/10.1117/12.483055
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