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17 September 2002 Fabrication of high-brightness blue InGaN/GaN MQW LEDs
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Abstract
In this article, we report the successful fabrication of high-brightness blue LEDs with InGaN/GaN multiple quantum well structures grown by low pressure metalorganic vapor phase epitaxy on sapphire substrates. The active region is composed of five pairs of InGaN well and GaN:Si barrier. The epitaxial wafer is processed into mesa diodes by inductively coupled plasma etching technique, with SiO2 deposited by plasma-enhanced chemical vapor deposition as the etching mask. The diode chips are then encapsulated into transparent epoxy to form packaged LEDs. The typcial emitting spectrum of the blue LEDs shows a peak wavelength at 460 nm and a FWHM of 30 nm. The working voltage and output power of blue lEDs shows a peak wavelength at 460 nm and a FWHM of 30 nm. The working voltage and output power of blue LEDs at a forward current of 20 mA are 3.6V and 1.5mW, respectively. The reverse leakage current at 5V was about 5μA , and the wavelength uniformity is 0.25 nm.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Luo, Yanjun Han, Wenping Guo, Changzheng Sun, Zhi-Biao Hao, and Hui Hu "Fabrication of high-brightness blue InGaN/GaN MQW LEDs", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483056
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