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17 September 2002 Improved lasing property of neodymium-doped lanthanum scandium borate microchip laser
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Abstract
The single crystals of neodymium doped lanthanum scandium borate were grown for the microchip laser fabrication. The crystal structure and parameters were analyzed to define the crystal phase and characteristics. The optical properties, such as fluorescent lifetime, refractive indices, absorption and emission spectra with doping concentration, were investigated and compared to the other neodymium doped single crystals in laser application. The fundamental lasing experiment with 808 nm, consistent with commercial diode laser wavelength, was done with Ti:sapphire laser. And we showed that the direct pumping to the level of 4F3/2 make an improvement in slope efficiency and threshold when it is compared to the result of conventional pumping to the level of 4F5/2 absorption band. The direct pumping played a role for reduction of dissipative heat generation in microchip laser crystal, because its quantum efficiency is higher than the conventional pumping to the level of 4F5/2.
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Won Kweon Jang, Takunori Taira, Tae Hoon Kim, Young Moon Yu, and Hoseob Kim "Improved lasing property of neodymium-doped lanthanum scandium borate microchip laser", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483078
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