Influence of substrates on photoluminescence for ZnO films prepared by r.f. sputtering

Qingpu Wang; Deheng Zhang; Z. Y. Xue; Jin Ma

doi:10.1117/12.483101

17 September 2002 Influence of substrates on photoluminescence for ZnO films prepared by r.f. sputtering

Qingpu Wang, Deheng Zhang, Z. Y. Xue, Jin Ma

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483101
Event: Photonics Asia, 2002, Shanghai, China

Abstract

ZnO films were deposited on sapphire, Si, quartz and Cornign 7059 glass substrates by r.f. sputtering. A 356 nm UV photoluminescence (PL) peak corresponding to inter-band transition was observed for the films deposited on sapphire, Si and quartz substrates when excited with 270 nm light. For the films prepared on Corning 7059 glass, only a 446 nm blue emission peak originated from electron transition from shallow donor level of oxygen vacancies to the valence band was found. After high temperature annealing in air, the intensity of PL peaks for the films onthe former three types substrates increased pronouncedly.

Citation Download Citation

Qingpu Wang, Deheng Zhang, Z. Y. Xue, and Jin Ma "Influence of substrates on photoluminescence for ZnO films prepared by r.f. sputtering", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483101

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