17 September 2002 Investigation of transport properties of doped GaAs epitaxial layers using an open photoacoustic cell
Author Affiliations +
Abstract
An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sajan D. George, Sajan D. George, S. Dilna, S. Dilna, P. Suresh Kumar, P. Suresh Kumar, Periasamy Radhakrishnan, Periasamy Radhakrishnan, V. P. N. Nampoori, V. P. N. Nampoori, C. P. G. Vallabhan, C. P. G. Vallabhan, } "Investigation of transport properties of doped GaAs epitaxial layers using an open photoacoustic cell", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483079; https://doi.org/10.1117/12.483079
PROCEEDINGS
7 PAGES


SHARE
Back to Top