17 September 2002 MOCVD growth and optical characterization of CdS and ZnCdS epilayers on GaAs substrate
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Abstract
CdS and ZnCdS epilayers are grown on GaAs by LP-MOCVD. It is found that the thickness of CdS epilayer is greatly influenced by the growth temperature. In our case, the sticking coefficient of CdS is nearly zero at temperatures greater than or equal to 500°C. The wide values of FWHMs of CdS emission band are thought as a result of the poor crystal quality caused due to the deviation of stoichiometry ratio of Cd/S. The crystal quality can be imprved with increasing the thickness of CdS epilayers when the flow rate of H2S is selected. The growth conditions of Zn0.76Cd0.24S epilayers aer investigated and the deep center emission band is attributed to sulfer-related defect.
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Jiying Zhang, Jiying Zhang, Zhenzhong Zhang, Zhenzhong Zhang, C. X. Shan, C. X. Shan, De Zen Shen, De Zen Shen, Yichun Liu, Yichun Liu, Youming Lu, Youming Lu, X. W. Fan, X. W. Fan, } "MOCVD growth and optical characterization of CdS and ZnCdS epilayers on GaAs substrate", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483049; https://doi.org/10.1117/12.483049
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