17 September 2002 Nanocrystalline SiC films deposited at low temperature using hot filament chemical vapor deposition
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Abstract
Nanocrystalline SiC films have been synthesized on Si substrate using hot filament chemical vapor deposition with methane and silane as reaction gases. The microstructure, morphology and photoluminescence of the films are characterized by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence respectively. Results show that the films deposited at relatively low substate temperature are composed of SiC nanocrystallines embedded in SiC amorphous matrix. The size of the nanocrystallites is about 5 nm. The visible-light emitting at the range of 400nm and 550nm has been observed from the nanocrystalline films at room temperature.
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Wei Yu, Wei Yu, Zhi-yuan Zheng, Zhi-yuan Zheng, Li Han, Li Han, Guangsheng Fu, Guangsheng Fu, } "Nanocrystalline SiC films deposited at low temperature using hot filament chemical vapor deposition", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483072; https://doi.org/10.1117/12.483072
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