17 September 2002 Numerical simulation study on Cz growth of silicon single crystal in a magnetic field
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Abstract
In this paper, Cz growth of silicon single crystal in a magnetic field was studied with numerical simulation method. The results of numerical simulation showed that convection of melt could be controlled when the magnetic field was added, moreover, forced convection was controlled much larger than natural convection. The oxygen concentration of the interface would decrease with the strengthening of the magnetic field intensity, but the temperature field of the melt did not change with the strenghtening of the magnetic field.
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Jinghe Liu, Jinghe Liu, Jing Sun, Jing Sun, Zhongli Zhu, Zhongli Zhu, Ying Cao, Ying Cao, Ling Liu, Ling Liu, Yingwei Wang, Yingwei Wang, } "Numerical simulation study on Cz growth of silicon single crystal in a magnetic field", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483096; https://doi.org/10.1117/12.483096
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