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17 September 2002 Properties for GaN films on silicon (111) substrates
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Abstract
High-quality gallium nitride (GaN) films were prepared on Si substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SAED reveal that the films consists of hexagonal wurtzite GaN wiht c-axis oriented polycrystalline grains. A strong UV photoluminescence located at 354 nm is observed for room temperature measurement. The bandgap of these films has a blueshift wiht respect to bulk GaN.
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Yingge Yang, Hong-Lei Ma, Cheng-Shan Xue, Hui-Zhao Zhuang, and Jin Ma "Properties for GaN films on silicon (111) substrates", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483041
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