Circuit simulation of RTD and HPT monolithic optoelectronic integration

PingJuan Niu; Weilian Guo; Hui-lai Liang; Shilin Zhang; Chang-yun Miao; Jin-hai Wang; Hai-Tao Qi

doi:10.1117/12.471885

20 September 2002 Circuit simulation of RTD and HPT monolithic optoelectronic integration

PingJuan Niu, Weilian Guo, Hui-lai Liang, Shilin Zhang, Chang-yun Miao, Jin-hai Wang, Hai-Tao Qi

Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002) https://doi.org/10.1117/12.471885
Event: Photonics Asia, 2002, Shanghai, China

Abstract

We first proposed monolithic optoelectronic integration of Resonant Tunneling Diode (RTD) and Heterojunction Bipolar Phototransistor (HPT). Circuit simulations using simple models of RTD and HPT successfully produced the optoelectronic bistable characteristics of RTD and HPT Negative Differential Resistance (NDR) device. The basic operation mechanism of Photoelectric Monostable-Bistable Transition Logic Elements (PMOBILE's) by utilizing the functionality of two series-connected RTDs in combination with HPT is also demonstrated by simulation.

Citation Download Citation

PingJuan Niu, Weilian Guo, Hui-lai Liang, Shilin Zhang, Chang-yun Miao, Jin-hai Wang, and Hai-Tao Qi "Circuit simulation of RTD and HPT monolithic optoelectronic integration", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.471885

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