20 September 2002 Gallium arsenide photoaddressed infrared liquid crystal spatial light modulator
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Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002); doi: 10.1117/12.470953
Event: Photonics Asia, 2002, Shanghai, China
Abstract
Detailed description of the structure, operation, fabrication, and performance of a fast-response metal-insulator-semiconductor structure mono-crystalline gallium arsenide as photo-addressing medium for infrared liquid crystal spatial light modulator (GaAs-IR-SLM) is reported. A GaAs-IR-SLM is demonstrated with a limiting resolution of 20 lp/mm over a 40 mm aperture and contrast ratios of greater than 20:1 in the 8 to approximately 12 μm wavelength.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JiaoBo Gao, Jun Wang, Jilong Wang, HuiLing Chen, Ling Ma, WeiNa Wang, "Gallium arsenide photoaddressed infrared liquid crystal spatial light modulator", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.470953; https://doi.org/10.1117/12.470953
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KEYWORDS
Liquid crystals

Gallium arsenide

Infrared imaging

Infrared radiation

Infrared photography

Germanium

Optical alignment

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