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20 September 2002 Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process
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Abstract
In this paper, the experimental synthesis of diamond films and optical emission spectroscopy (OES) of the gaseous phase species are studied in the range of substrate temperature from Ts = 300°C to 850°C. The high quality sub-microcrystalline diamond films are successfully deposited at substrate temperature (330 ≈ 340)°C by adopting glow plasma assisted hot filament chemical vapor deposition (GPCVD). For the first time, in situ OES is applied to diagnose weak signal of GPCVD system when CH4 and H2 are used as the input gas, and the reactive species are identified in diamond growth processes. A primary model of diamond films growing at low temperature is presented by studying dynamic behavior for nonequilibrium plasma reactions.
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Qingxun Zhao, Yong Shang, Lifang Dong, Guangsheng Fu, Zheng Yan, and Jingfa Yang "Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465651
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