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20 September 2002 Synthesis of thin diamond films on Si substrate by the means of near surface glow discharge CVD
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Abstract
In this paper, nanocrystalline diamond films had been synthesized by near surface glow discharge chemical vapor deposition on single-crystalline (100) silicon substrates when methane and hydrogen acted as input gases. The characters of the diamond films had been identified by scanning electron microscopy (SEM), Raman Spectrum and X-ray diffraction (XRD). The analytic results show that the high quality nanocrystalline diamond film of (111) orientation had been deposited on single-crystalline (100) silicon substrate at temperature of approximately 850°C. Simultaneously, the studies of the influence of gas pressure and CH4 concentration in feeding gas on the diamond growth were made.
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Yong Shang, Lifang Dong, and Boqin Ma "Synthesis of thin diamond films on Si substrate by the means of near surface glow discharge CVD", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465648
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