5 September 2002 Optical properties of vertically stacked self-assembled InAs quantum dots in Al0.5Ga0.5As barriers
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Proceedings Volume 4923, Nano-Optics and Nano-Structures; (2002); doi: 10.1117/12.481710
Event: Photonics Asia, 2002, Shanghai, China
Vertically stacked QD growth in precision can be incorporated to develop new structures and improve the size and spatial distribution ofthe strain-induced QD ensemble. Photoluminescence (PL) ofquantum dots embedded in high potential barriers is studied as functions ofbarrier thickness, temperature, and laser excitation power. With the increase of un-doped barrier thickness, both of strengthened two-dimensional electron gas (2DEG) structure and strongly localized electron wave functions can increase the carrier recombination. The optical properties of different-barrier-thickness samples exhibit different characteristics with the decreased measurement temperatures. The PL recombination characteristic of the samples with the barriers adjacent to a Si-doping GaAs layer is different from that of samples with barrier adjacent to an i-GaAs layer.
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Shuwei Li, Guoqing Miao, Hong Jiang, Guang Yuan, Hang Song, Yixin Jin, Kazuto Koike, "Optical properties of vertically stacked self-assembled InAs quantum dots in Al0.5Ga0.5As barriers", Proc. SPIE 4923, Nano-Optics and Nano-Structures, (5 September 2002); doi: 10.1117/12.481710; https://doi.org/10.1117/12.481710

Gallium arsenide

Indium arsenide

Optical properties

Quantum dots

Temperature metrology


Thermal effects

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