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5 September 2002 Self-organized LPE growth of Al0.3Ga0.7As microtips for integrated SNOM sensors
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Abstract
Scanning near-field optical microscope (SNOM) is a new photoelectrical tool for the research down to nanomcter scale. Recently, Gorecki et al. have proposed a promising archltectLlre ofmonolithic integrated miniature SNOM sensors composed of only three elements (a PIN detector, a VCSEL and a microtip) and have developed a wet etching method of fabricating GaAs microtips. However, the etching process can hardly be controlled precisely. In this report, we propose an improved technique for manufacturing Al0.3Ga0.7As microtips grown by self-assembled liquid-phase epitaxy (LPE) for integrated SNOM sensors. In conventional LPE growing process, we used the properties that AIGaAs surface can be easily partialy oxided and can spontaneously create micrometer-sized windows to grow pyramid-like microtips in the windows self-organizedly. Using this technique, the miniature pyramid-like probes can be directly grown onto the external facet of the VCSEL.
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Yingmei Su, Lizhong Hu, Jie Sun, Qingduan Meng, Yu Zhao, and Zhaoyang Wang "Self-organized LPE growth of Al0.3Ga0.7As microtips for integrated SNOM sensors", Proc. SPIE 4923, Nano-Optics and Nano-Structures, (5 September 2002); https://doi.org/10.1117/12.481705
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