5 September 2002 Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum
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Abstract
This paper describes the Raman mapping spectrum studies on polycrystalline silicon thin films which were cultivated on glass plate by the way of PECVD. The characteristic peak (520cm-1) of nano-polycrystalline silicon it can shift to the longer wavelength under effect of compression stress so the effect of stress can mask the effect of nano-effect. We studied the cracks on the surface of polycrystalline silicon thin films caused by stress with Raman mapping spectrum and we find the Raman peak of polycrystalline silicon moved to 518 cm-1 in the middle of crack, in which the stress had been released. We obtained the stress distribution image by mapping the position of the peak 518 cm-1 and we got the same image by mapping the peak width of the peak 518 cm1 we studied the transition peak 510 cm-1 between 520 cm-1 and 480 cm-1 by curve fitting and we find the position and width of this peak are very sensitive to stress. Furthermore, the amorphous peak 480 cm-1 is not as sensitive as peak 520cm-1 to stress. So it is difficult to get an accurate stress distribution image by mapping the amorphous peak.
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Xiao xuan Xu, Xiao xuan Xu, Hai bo Lin, Hai bo Lin, Zhong chen Wu, Zhong chen Wu, Hong bo Li, Hong bo Li, Cun zhou Zhang, Cun zhou Zhang, } "Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum", Proc. SPIE 4923, Nano-Optics and Nano-Structures, (5 September 2002); doi: 10.1117/12.481723; https://doi.org/10.1117/12.481723
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