10 September 2002 Structural design of novel low-actuation MEMS switches for X-band application
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Micromechanical switches have demonstrated great potential at microwave and millimeterwave frequencies due to their very low intermodulation distortion, low power consumption, and low insertion loss characteristics. Comparing to traditional semiconductor switches, however, one of the most obstacle that hindered the application of MEMS switches is their high actuation voltage. To decrease its threshold voltage, the paper presents a novel MEMS switch. The switch is composed of a movable corrugated membrane, which can be pulled down onto the GaAs substrate at 12V. It has superior high-frequency performance with insertion loss of <0.25dB, and isolation better than 20dB at X-band frequency. Its structural design is mainly presented in this paper.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weibin Zheng, Qing-An Huang, Fu-Xiao Li, "Structural design of novel low-actuation MEMS switches for X-band application", Proc. SPIE 4928, MEMS/MOEMS Technologies and Applications, (10 September 2002); doi: 10.1117/12.483188; https://doi.org/10.1117/12.483188


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