Characterization of the near-field profile of semiconductor lasers and the spot size of tightly focused laser beams from far-field measurements

Jeffrey L. Guttman; John M. Fleischer

doi:10.1117/12.472393

30 May 2003 Characterization of the near-field profile of semiconductor lasers and the spot size of tightly focused laser beams from far-field measurements

Jeffrey L. Guttman, John M. Fleischer

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Proceedings Volume 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization; (2003) https://doi.org/10.1117/12.472393
Event: XXXIV Annual Symposium on Optical Materials for High Power Lasers: Boulder Damage Symposium, 2002, Boulder, CO, United States

Abstract

Characterization of the near field of typical semiconductor lasers and the spot size of tightly focused laser beams poses significant challenges to direct near-field profile measurement techniques. Far-field measurements are considerably easier to perform and offer an attractive alternative for this characterization. To assess this alternative, profiles of edge-emitting laser diodes and VCSELs, and the spot size of focused laser beams were determined from far-field and near-field measurements. In the far field, measurements were made using a 3D-scanning goniometric radiometer that provides irradiance profiles with angular extent to approximately ±70°. Indirect measures derived from these data using different methods are reported, including the spot size using the M² times-diffraction-limited approximation, the Hankel transform Petermann II mode-field diameter used for optical fiber characterization, and a measure obtained from 2D Fourier transform inversion of the far field using phase retrieval. In the near field, direct profile measurements were made using a scanning-slit profiler and a CCD camera with magnifying lenses.

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Jeffrey L. Guttman and John M. Fleischer "Characterization of the near-field profile of semiconductor lasers and the spot size of tightly focused laser beams from far-field measurements", Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); https://doi.org/10.1117/12.472393

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KEYWORDS

Near field

Cameras

Vertical cavity surface emitting lasers

Semiconductor lasers

Fourier transforms

CCD cameras

Radiometry

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