30 May 2003 Dependence of surface damage resistance on bulk quality in CsLiB6O10 (CLBO) crystal (Abstract Only)
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There has been great interest in high-repetition, high-power ultraviolet (UV) source for various applications in semiconductor processing, micro machining, and other fields. Discovery of CsLiB6O10(CLBO) crystals have enabled the production of such practical high-power all solid-state UV lasers. In 2001, UV output power up to 23.0 W by fourth harmonic generation of Nd:YAG laser was achieved. In general, one of the limiting factors for the development of high-power solid-state UV lasers is laser-induce damage of NLO crystal due to some kinds of defects inside the materials. Recently, we have succeeded to grow the high crystallinity CLBO with an enhanced bulk laser damage resistance. On these samples, an increase in the surface damage resistance could be expected. Measurement of the surface laser-induced damage threshold (LIDT) on CLBO crystals with various crystallinity was performed by using a 266 nm laser. For the crystal with high damage resistance (15-18 GW/cm2), LIDT of as-polished surface was 1.3 times higher than that of crystal with conventional damage resistance (9-12 GW/cm2). In addition, polishing compound embedded inside the crystal surface was removed by using an ion-beam etching process. We have observed 1.5 times improved surface LIDT by ion beam etching for both high damage resistance and conventional damage resistance samples. The relationships between vickers hardness and crystal quality will be presented.
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Tomosumi Kamimura, Tomosumi Kamimura, Satoru Fukumoto, Satoru Fukumoto, Munenori Nishioka, Munenori Nishioka, Masashi Yoshimura, Masashi Yoshimura, Yusuke Mori, Yusuke Mori, Takatomo Sasaki, Takatomo Sasaki, Kunio Yoshida, Kunio Yoshida, } "Dependence of surface damage resistance on bulk quality in CsLiB6O10 (CLBO) crystal (Abstract Only)", Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.472386; https://doi.org/10.1117/12.472386

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