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Abstract
The large-spot out-of-band irradiation of Ge wafers and subsequent evaluation is discussed in this paper. The wafers were irradiated with a high-power, cw COIL system, operating at a wavelength of 1.315 μm. Damaging fluence values on the order of 1 kJ/cm2 were found for irradiation periods of several seconds. Thermal simulations were consistent with experimental findings. The damage morphology showed melt and microcrystallites. For sample evaluation, a compact modulation transfer function (MTF) test bench has been developed.
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Wolfgang Riede and Karin M. Gruenewald "Large-spot COIL irradiation of Ge samples", Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); https://doi.org/10.1117/12.472054
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