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30 May 2003Ultrashort pulse damage of Si and Ge semiconductors
An experimental and theoretical investigation of ultrashort pulse damage thresholds of Si and Ge semiconductors has been carried out. As the source of laser radiation, a commercial sub picosecond Ti:Sapphire laser system has been used. It produces laser pulses of 0.5 mJ pulse energy at 1 kHz repetition rate, providing a Gaussian-like beam profile. Compressor tuning allowed for varying the pulse duration from 150 fs to 5.5 ps. The laser damage thresholds were measured in air and for this pulse duration range. The damage morphologies were investigated with various microscopic inspection techniques like Nomarski DIC, atomic force and white light interference microscopy.
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Paul Allenspacher, Bernd Huettner, Wolfgang Riede, "Ultrashort pulse damage of Si and Ge semiconductors," Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003);