13 November 2002 Electrical and mechanical properties of PZT thin films prepared by hybrid process of sol-gel technique and laser ablation
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Abstract
To prepare lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) thin films at a higher deposition rate and a lower substrate temperature, the PZT films were fabricated by a hybrid process of sol-gel technique and pulsed laser ablation deposition. First, one layer of PZT (about 0.12-0.14 μm) was coated on Si/SiO2/Ti/Pt substrate by sol-gel process. Then PZT film was deposited at a rate of 0.7 μm/hr by pulsed excimer laser-ablation on the substrate with one sol-gel derived PZT seed layer. A target of Pb(Zr0.52Ti0.48)O3 with 20 wt% excess PbO was used. The substrate temperature was about 500 °C. The film fabricated by the hybrid process showed the perovskite PZT phase without pyrochlore phase. The dielectric constant measured at 1 kHz was approximately 1580. The saturation polarization, remnant polarization and coercive field of 0.8 μm thick film were about 46.6 μC/cm2, 24.5 μC/cm2 and 36.4 kV/cm, respectively. The residual stresses in the thin film stacks were measured by the changes in the radius of curvature of the wafer. A relatively lower tensile stress (approximately 33 MPa) was obtained compared to the sol-gel derived PZT film. Therefore, the PZT films with good electrical and mechanical properties can be fabricated by using the hybrid process of the sol-gel technique and laser ablation.
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Lulu Zhang, Lulu Zhang, Masaaki Ichiki, Masaaki Ichiki, Zhanjie Wang, Zhanjie Wang, Ryutaro Maeda, Ryutaro Maeda, } "Electrical and mechanical properties of PZT thin films prepared by hybrid process of sol-gel technique and laser ablation", Proc. SPIE 4934, Smart Materials II, (13 November 2002); doi: 10.1117/12.469049; https://doi.org/10.1117/12.469049
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