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13 November 2002 Delineation of MEMS microstructures in silicon using CF4/O2 gas mixtures in reactive ion etching
Ashok K. Paul, Ashok K. Dimri, Ram P. Bajpai
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Proceedings Volume 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems; (2002) https://doi.org/10.1117/12.469743
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia
Abstract
Experiments performed in a reactive ion etching (RIE) system are discussed with the purpose of studying the influence of the addition of O2 in different ratios in the main CF4 gas flow for silicon etching. Conventional planer reactive ion etching system has been utilized for etching of SiO2 and silicon in fluorine chemistry. The patterns were delineated in SiO2 using photo-resist as the mask material using CHF3 gas in combination with argon. Sidewall passivation technique has been employed to achieve microstructure profile control in silicon. The quantity of O2 gas was varied from 2 to 10% in the total CF4 gas flow (10 sccm) at self dc-bias of -250 volts and process pressure 30 mTorr to achieve a balance between fluorine and oxygen radicals. Anisotropic etched profiles with smooth bottom surfaces were obtained at 2% O2 flow in CF4. The usefulness of this technique has been demonstrated for the delineation of MEMS microstructures in silicon.
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Ashok K. Paul, Ashok K. Dimri, and Ram P. Bajpai "Delineation of MEMS microstructures in silicon using CF4/O2 gas mixtures in reactive ion etching", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); https://doi.org/10.1117/12.469743
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KEYWORDS
Reactive ion etching
Silicon
Microelectromechanical systems
Etching
Fluorine
Argon
Chemistry
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