13 November 2002 Investigation of ultralow-load nanoindentation for the patterning of nanostructures
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In this study, nanoindents are characterized for the patterning of nanostructures. Nanoindentation is performed on Sidoped (n-type)Vertical Gradient Freeze (VGF) GaAs (100) and epitaxial GaAs (100) using a diamond Cube Corner indenter. Nanoindentation of GaAs has been studied in the past, but not at extremely low loads. Previous research has been done on high load (50-200 mN) and low load (0.2-8 mN) nanoindentation. The size of nanostructures range from 10-100 nm, requiring a nanoindentation width in the same size range. The loads required to produce such small indentations are in a lower regime of <0.2 mN, which to the authors’ knowledge is an area that has not been previously studied using a Cube Corner indenter. Ultra-low-load (<0.2 mN) nanoindentations are characterized in order to study the selective growth of nanostructures on the indentation sites. Indentations of less than 200 nm in width are produced, and mechanical properties of the two materials including hardness and elastic modulus are calculated and compared. The geometry of the indents is characterized using atomic force microscopy (AFM).
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Curtis Taylor, Curtis Taylor, Robin Prince, Robin Prince, Ajay P. Malshe, Ajay P. Malshe, Laura Riester, Laura Riester, Gregory J. Salamo, Gregory J. Salamo, Seong Oh Cho, Seong Oh Cho, } "Investigation of ultralow-load nanoindentation for the patterning of nanostructures", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); doi: 10.1117/12.476103; https://doi.org/10.1117/12.476103

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