15 April 2003 Direct laser writing on porous silicon
Author Affiliations +
Abstract
An easy and effective technique for locally oxidize, melt or remove Porous Silicon layers is presented and discussed. The method takes advantage from the very low thermal conductivity of Porous Silicon. With the aid of a focused laser beam, it is possible to reach temperatures of several hundreds °C at the illuminated spot. Results on fabrication of all-porous planar waveguides are presented and discussed. Preliminary results on the application of this technique for fabricating 2D and 3D photonic crystals are reported.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Mario Rossi, Andrea Mario Rossi, Stefano Borini, Stefano Borini, Luca Boarino, Luca Boarino, Gianpiero Amato, Gianpiero Amato, } "Direct laser writing on porous silicon", Proc. SPIE 4941, Laser Micromachining for Optoelectronic Device Fabrication, (15 April 2003); doi: 10.1117/12.468493; https://doi.org/10.1117/12.468493
PROCEEDINGS
8 PAGES


SHARE
Back to Top